PERFORMANCE EVALUATION OF NOVEL DEVICES BASED ON 3-D REAL-SPACE ATOMIC SIMULATORS AND FULL COMPLEX BANDSTRUCTURE
Ph.D
Saved in:
Main Author: | ZHANG XIAOYI |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Theses and Dissertations |
Language: | English |
Published: |
2018
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/142766 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Language: | English |
Similar Items
-
NEGATIVE CAPACITANCE FERROELECTRIC MOSFET FOR LOW POWER CIRCUITS: POTENTIAL AND LIMITATIONS
by: YANG LI
Published: (2017) -
Electronic bandstructure and optical gain of lattice matched III-V dilute nitride bismide quantum wells for 1.55 μm optical communication systems
by: Fan, Wei Jun, et al.
Published: (2017) -
THEORETICAL STUDY OF DEVICE PERFOMANCE AND PHYSICS BASED ON TWO-DIMENIONAL (2D) MATERIAL
by: LUO SHENG
Published: (2020) -
Simulation of multiple gate FinFET device gate capacitance and performance with gate length and pitch scaling
by: Zhao, H., et al.
Published: (2014) -
Analysis of the effects of fringing electric field on finFET device performance and structural optimization using 3-D simulation
by: Zhao, H., et al.
Published: (2014)