SIMULATION OF COPPER ELECTRODEPOSITION FOR HIGH ASPECT RATIO THROUGH- SILICON VIA APPLICATIONS IN THREE- DIMENSIONAL INTEGRATED CIRCUITS

• Main Author: NAGARAJAN RAGHAVAN
• Other Authors: SINGAPORE-MIT ALLIANCE
• Format: Theses and Dissertations
• Published: 2019
• Subjects: Accelerator; Butler Volmer kinetics; Copper electrodeposition; Finite element simulation; Inhibitor; Keyhole; Leveler; Overpotential; Through silicon via (TSV); 3D integrated circuits
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/153952
• Institution: National University of Singapore

Master's