BANDGAP ENGINEERING OF QUANTM DOT STRUCTURES BY LASER ANNEALING
Master's
Saved in:
Main Author: | LI SHAOZHOU |
---|---|
Other Authors: | SINGAPORE-MIT ALLIANCE |
Format: | Theses and Dissertations |
Published: |
2019
|
Subjects: | |
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/154225 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Impurity free vacancy disordering of InAs/GaAs quantum dot and InAs/InGaAs dot-in-a-well structures
by: Chia, C.K., et al.
Published: (2014) -
Characterization of ge nanocrystals in a-SiO2 synthesized by rapid thermal annealing
by: Choi, W.K., et al.
Published: (2014) -
Quantum confinement and excitonic effects in vertically coupled quantum dots
by: Xu, X., et al.
Published: (2014) -
Compositional effect on the optical absorption and photoluminescence ofCdSxSe1-x quantum dots embedded in borosilicate glasses
by: Kumar, J., et al.
Published: (2014) -
Monolithic Fabrication of InGaAs/GaAs/AlGaAs Multiple Wavelength Quantum Well Laser Diodes via Impurity-Free Vacancy DisorderingQuantum Well Intermixing
by: Qiao, Zhongliang, et al.
Published: (2017)