TUNNELING IN RELIABILITY STUDY OF MOS STRUCTURES
Master's
Saved in:
Main Author: | MA SIGUANG |
---|---|
Other Authors: | ELECTRICAL ENGINEERING |
Format: | Theses and Dissertations |
Published: |
2020
|
Online Access: | https://scholarbank.nus.edu.sg/handle/10635/178985 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
Ge MOS transistor technology and reliability
by: Zhu, C.
Published: (2014) -
Germanium MOS: An Evaluation from Carrier Quantization and Tunneling Current
by: Low, T., et al.
Published: (2014) -
RELIABILITY CHARACTERIZATION OF MOS TRANSISTORS USING THE DRAIN CURRENT CONDUCTANCE METHOD
by: TAN CHIEW BOO
Published: (2020) -
RELIABILITY INVESTIGATION OF MOS DEVICES UNDER HIGH CURRENT IMPULSE STRESSING
by: TEH GIM LEONG
Published: (2020) -
Modeling face reliability in tunneling : a copula approach
by: Pan, Yue, et al.
Published: (2021)