A General Dimension Reduction Method for the Dispersion Modeling of Semiconductor Devices

10.1109/ACCESS.2018.2855044

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Bibliographic Details
Main Authors:	Huang, A.-D., Zhong, Z., Guo, Y.-X., Wu, W.
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Published:	Institute of Electrical and Electronics Engineers Inc. 2021
Subjects:	AlGaN/GaN HEMT charge trapping Dimension reduction dispersion empirical model large signal model LDMOS self-heating semiconductor devices Taylor expansion thermal
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/206440
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-206440
record_format	dspace
spelling	sg-nus-scholar.10635-2064402024-04-16T11:13:31Z A General Dimension Reduction Method for the Dispersion Modeling of Semiconductor Devices Huang, A.-D. Zhong, Z. Guo, Y.-X. Wu, W. ELECTRICAL AND COMPUTER ENGINEERING AlGaN/GaN HEMT charge trapping Dimension reduction dispersion empirical model large signal model LDMOS self-heating semiconductor devices Taylor expansion thermal 10.1109/ACCESS.2018.2855044 IEEE Access 6 39422-39434 2021-11-16T08:15:59Z 2021-11-16T08:15:59Z 2018 Article Huang, A.-D., Zhong, Z., Guo, Y.-X., Wu, W. (2018). A General Dimension Reduction Method for the Dispersion Modeling of Semiconductor Devices. IEEE Access 6 : 39422-39434. ScholarBank@NUS Repository. https://doi.org/10.1109/ACCESS.2018.2855044 2169-3536 https://scholarbank.nus.edu.sg/handle/10635/206440 Attribution-NonCommercial-NoDerivatives 4.0 International https://creativecommons.org/licenses/by-nc-nd/4.0/ Institute of Electrical and Electronics Engineers Inc. Scopus OA2018
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	AlGaN/GaN HEMT charge trapping Dimension reduction dispersion empirical model large signal model LDMOS self-heating semiconductor devices Taylor expansion thermal
spellingShingle	AlGaN/GaN HEMT charge trapping Dimension reduction dispersion empirical model large signal model LDMOS self-heating semiconductor devices Taylor expansion thermal Huang, A.-D. Zhong, Z. Guo, Y.-X. Wu, W. A General Dimension Reduction Method for the Dispersion Modeling of Semiconductor Devices
description	10.1109/ACCESS.2018.2855044
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Huang, A.-D. Zhong, Z. Guo, Y.-X. Wu, W.
format	Article
author	Huang, A.-D. Zhong, Z. Guo, Y.-X. Wu, W.
author_sort	Huang, A.-D.
title	A General Dimension Reduction Method for the Dispersion Modeling of Semiconductor Devices
title_short	A General Dimension Reduction Method for the Dispersion Modeling of Semiconductor Devices
title_full	A General Dimension Reduction Method for the Dispersion Modeling of Semiconductor Devices
title_fullStr	A General Dimension Reduction Method for the Dispersion Modeling of Semiconductor Devices
title_full_unstemmed	A General Dimension Reduction Method for the Dispersion Modeling of Semiconductor Devices
title_sort	general dimension reduction method for the dispersion modeling of semiconductor devices
publisher	Institute of Electrical and Electronics Engineers Inc.
publishDate	2021
url	https://scholarbank.nus.edu.sg/handle/10635/206440
_version_	1800915108472291328

A General Dimension Reduction Method for the Dispersion Modeling of Semiconductor Devices

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