A General Dimension Reduction Method for the Dispersion Modeling of Semiconductor Devices

• Main Authors: Huang, A.-D., Zhong, Z., Guo, Y.-X., Wu, W.
• Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
• Format: Article
• Published: Institute of Electrical and Electronics Engineers Inc. 2021
• Subjects: AlGaN/GaN HEMT; charge trapping; Dimension reduction; dispersion; empirical model; large signal model; LDMOS; self-heating; semiconductor devices; Taylor expansion; thermal
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/206440
• Institution: National University of Singapore

10.1109/ACCESS.2018.2855044