An Evolutionary Multilayer Perceptron-Based Large-Signal Model of GaN HEMTs Including Self-Heating and Trapping Effects

• Main Authors: Wenrui Hu, Guo Yongxin
• 其他作者: Rudolph, Matthias
• 格式: Article
• 語言: English
• 出版: Institute of Electrical and Electronics Engineers (IEEE) 2021
• 主題: Artificial neural network; evolutionary multilayer perceptron; GaN high electron mobility transistors; large-signal modeling; self-heating effects; trapping effects
• 在線閱讀: https://scholarbank.nus.edu.sg/handle/10635/210316

10.1109/TMTT.2021.3132892