100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics

100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics

10.1021/acsphotonics.2c01878

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Bibliographic Details
Main Authors: Pu, Yuhan, Liang, Yung C
Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
Format: Article
Language:English
Published: AMER CHEMICAL SOC 2023
Subjects:
AlGaN/GaN photodetector
ultra-low voltage
fin capacitor
partial sidewall oxide
integrated optoelectronics
Online Access:https://scholarbank.nus.edu.sg/handle/10635/241852
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Institution: National University of Singapore
Language: English
Description
Summary:10.1021/acsphotonics.2c01878

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