100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics

10.1021/acsphotonics.2c01878

Saved in:

Bibliographic Details
Main Authors:	Pu, Yuhan, Liang, Yung C
Other Authors:	ELECTRICAL AND COMPUTER ENGINEERING
Format:	Article
Language:	English
Published:	AMER CHEMICAL SOC 2023
Subjects:	AlGaN/GaN photodetector ultra-low voltage fin capacitor partial sidewall oxide integrated optoelectronics
Online Access:	https://scholarbank.nus.edu.sg/handle/10635/241852
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore
Language:	English

id	sg-nus-scholar.10635-241852
record_format	dspace
spelling	sg-nus-scholar.10635-2418522024-11-11T08:20:52Z 100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics Pu, Yuhan Liang, Yung C ELECTRICAL AND COMPUTER ENGINEERING Assoc Prof Yung Chii Liang AlGaN/GaN photodetector ultra-low voltage fin capacitor partial sidewall oxide integrated optoelectronics 10.1021/acsphotonics.2c01878 ACS PHOTONICS 10 5 2023-06-12T04:34:35Z 2023-06-12T04:34:35Z 2023-04-12 2023-06-06T00:11:42Z Article Pu, Yuhan, Liang, Yung C (2023-04-12). 100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics. ACS PHOTONICS 10 (5). ScholarBank@NUS Repository. https://doi.org/10.1021/acsphotonics.2c01878 2330-4022 https://scholarbank.nus.edu.sg/handle/10635/241852 en AMER CHEMICAL SOC Elements
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
language	English
topic	AlGaN/GaN photodetector ultra-low voltage fin capacitor partial sidewall oxide integrated optoelectronics
spellingShingle	AlGaN/GaN photodetector ultra-low voltage fin capacitor partial sidewall oxide integrated optoelectronics Pu, Yuhan Liang, Yung C 100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics
description	10.1021/acsphotonics.2c01878
author2	ELECTRICAL AND COMPUTER ENGINEERING
author_facet	ELECTRICAL AND COMPUTER ENGINEERING Pu, Yuhan Liang, Yung C
format	Article
author	Pu, Yuhan Liang, Yung C
author_sort	Pu, Yuhan
title	100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics
title_short	100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics
title_full	100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics
title_fullStr	100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics
title_full_unstemmed	100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics
title_sort	100 mv ultra-low bias algan/gan photodetector based on fin-shaped capacitor configuration for future integrated optoelectronics
publisher	AMER CHEMICAL SOC
publishDate	2023
url	https://scholarbank.nus.edu.sg/handle/10635/241852
_version_	1821196384244596736

100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics

Similar Items