100 mV Ultra-Low Bias AlGaN/GaN Photodetector Based on Fin-Shaped Capacitor Configuration for Future Integrated Optoelectronics

• Main Authors: Pu, Yuhan, Liang, Yung C
• Other Authors: ELECTRICAL AND COMPUTER ENGINEERING
• Format: Article
• Language: English
• Published: AMER CHEMICAL SOC 2023
• Subjects: AlGaN/GaN photodetector; ultra-low voltage; fin capacitor; partial sidewall oxide; integrated optoelectronics
• Online Access: https://scholarbank.nus.edu.sg/handle/10635/241852
• Institution: National University of Singapore

10.1021/acsphotonics.2c01878