Schottky barrier source/drain n-mosfet using ytterbium silicide

Schottky barrier source/drain n-mosfet using ytterbium silicide

US7504328

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Bibliographic Details
Main Authors: ZHU, SHIYANG, CHEN, JINGDE, LEE, SUNGJOO, LI, MING FU, SINGH, JAGAR, ZHU, CHUNXIANG, KWONG, DIM-LEE
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Patent
Published: 2012
Online Access:http://scholarbank.nus.edu.sg/handle/10635/32776
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/32776

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