Schottky barrier source/drain n-mosfet using ytterbium silicide

Schottky barrier source/drain n-mosfet using ytterbium silicide

US7504328

Saved in:

Bibliographic Details
Main Authors:	ZHU, SHIYANG, CHEN, JINGDE, LEE, SUNGJOO, LI, MING FU, SINGH, JAGAR, ZHU, CHUNXIANG, KWONG, DIM-LEE
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Patent
Published:	2012
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/32776
Tags:	Add Tag No Tags, Be the first to tag this record!
Institution:	National University of Singapore

Similar Items

N-type Schottky barrier source/drain MOSFET using Ytterbium silicide
by: Zhu, S., et al.
Published: (2014)

N-channel FinFETs with 25-nm gate length and Schottky-Barrier source and drain featuring Ytterbium silicide
by: Lee, R.T.P., et al.
Published: (2014)

Drivability improvement in Schottky barrier source/drain MOSFETs with strained-Si channel by Schottky barrier height reduction
by: Zhu, S., et al.
Published: (2014)

Schottky-barrier si nanowire mosfet: Effects of source/drain metals and gate dielectrics
by: Yang, W., et al.
Published: (2014)

Fabrication of poly-Si TFT with silicided Schottky barrier source/drain, high-κ gate dielectric and metal gate
by: Zhu, S., et al.
Published: (2014)

Demonstration of Schottky barrier NMOS transistors with erbium silicided source/drain and silicon nanowire channel
by: Cui, Guangda, et al.
Published: (2012)

Low temperature MOSFET technology with Schottky barrier source/drain, high-K gate dielectric and metal gate electrode
by: Zhu, S., et al.
Published: (2014)

Advanced source/drain engineering for MOSFETs: Schottky barrier height tuning for contact resistance reduction
by: Yeo, Y.-C.
Published: (2014)

Sub-30 nm FinFETs with schottky-barrier source/drain featuring complementary metal silicides and fully-silicided gate for P-FinFETs
by: Lee, R.T.P., et al.
Published: (2014)

High performance P-channel schottky barrier MOSFETs with self-aligned PtSi source/drain on thin film SOI substrate
by: Zhu, S.-Y., et al.
Published: (2014)

Process-induced strained P-MOSFET featuring nickel-platinum silicided source/drain
by: Lee, R.T.P., et al.
Published: (2014)

Erbium silicided schottky source/drain silicon nanowire N-metal–oxide–semiconductor field-effect transistors
by: Tan, Eu Jin, et al.
Published: (2013)

Study of erbium disilicide and its application in Schottky source/drain silicon nanowire MOSFETs
by: Tan, Eu Jin
Published: (2010)

Nickel-silicide: Carbon contact technology for N-channel MOSFETs with silicon-carbon source/drain
by: Lee, R.T.P., et al.
Published: (2014)

Siliconr: Carbon source/drain stressors: Intégration of a novel nickel aluminide-silicide and post-solid-phase-epitaxy anneal for reduced schottky-barrier and leakage
by: Koh, S.-M., et al.
Published: (2014)

Novel epitaxial nickel aluminide-silicide with low Schottky-Barrier and series resistance for enhanced performance of dopant-segregated source/drain N-channel MuGFETs
by: Lee, R.T.P., et al.
Published: (2014)

SiGe on insulator MOSFET integrated with Schottky source/drain and HfO 2/TaN gate stack
by: Gao, F., et al.
Published: (2014)

Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate
by: Zhu, S., et al.
Published: (2014)

Germanium pMOSFETs With Schottky-barrier Germanide S/D, high-Κ gate dielectric and metal gate
by: Zhu, S., et al.
Published: (2014)

Schottky barrier engineering on dopant-segregated schottky silicon nanowire MOSFETs
by: Chin, Yoke King
Published: (2013)

Interface barrier abruptness and work function requirements for scaling Schottky source-drain MOS transistors
by: Agrawal, N., et al.
Published: (2014)

Method of forming a Yb-doped Ni full silicidation low work function gate electrode for n-MOSFET
by: YU, HONGYU, et al.
Published: (2012)

New developments in Schottky source/drain high-k/metal gate CMOS transistors
by: Li, M.-F., et al.
Published: (2014)

The role of carbon and dysprosium in Ni[Dy]Si:C contacts for schottky-barrier height reduction and application in N-channel MOSFETs with Si:C source/drain stressors
by: Lee, R.T.P., et al.
Published: (2014)

Pt-germanide schottky source/drain germanium p-MOSFET with HfO2 gate dielectric and TaN gate electrode
by: Li, R., et al.
Published: (2014)

Schottky-barrier S/D MOSFETs with high-K gate dielectrics and metal-gate electrode
by: Zhu, S., et al.
Published: (2014)

Schottky source/drain MOSFETs on SiGe on insulator with high-K gate dielectric and TaN gate electrode
by: Gao, F., et al.
Published: (2014)

Schottky barrier height tuning of silicide on Si1-x Cx
by: Sinha, M., et al.
Published: (2014)

Low Schottky barrier height for silicides on n -type Si (100) by interfacial selenium segregation during silicidation
by: Wong, H.-S., et al.
Published: (2014)

Modulation of effective Schottky barrier height of nickel silicide on silicon using pre-silicide ammonium sulfide treatment
by: Lim, P.S.Y., et al.
Published: (2014)

Dopant Segregated Schottky (DSS) Source/Drain for Germanium p-MOSFETs with Metal Gate/High-k Dielectric Stack
by: Ya Lim, P.S., et al.
Published: (2014)

Tuning the Schottky barrier height of nickel silicide on p -silicon by aluminum segregation
by: Sinha, M., et al.
Published: (2014)

Experimental and simulation study of the Schottky barrier lowering by substrate doping variation for PtSi source/drain SBFETs
by: Lousberg, G.P., et al.
Published: (2014)

Metal-germanide Schottky Source/Drain transistor on Germanium substrate for future CMOS technology
by: Li, R., et al.
Published: (2014)

Effect of substitutional carbon concentration on Schottky-barrier height of nickel silicide formed on epitaxial silicon-carbon films
by: Lim, P.S.Y., et al.
Published: (2014)

Schottky s/d MOSFETs with high-Kgate dielectrics and metal gate electrodes
by: Zhu, S., et al.
Published: (2014)

Schottky barrier tuning at NiSi/Si interface using pre-silicide aluminum and sulfur co-implant
by: Tong, Y., et al.
Published: (2014)

Silicidation using nickel and Dysprosium stack on Si(100): NiSi 2 formation and impact on Schottky Barrier Height
by: Lim, P.S.Y., et al.
Published: (2014)

Schottky barrier height tuning of silicides on p-type Si (100) by aluminum implantation and pulsed excimer laser anneal
by: Koh, S.-M., et al.
Published: (2014)

Material and electrical characterization of Ni- And Pt-germanides for p-channel germanium Schottky source/drain transistors
by: Yao, H.B., et al.
Published: (2014)