Schottky barrier source/drain n-mosfet using ytterbium silicide

• Main Authors: ZHU, SHIYANG, CHEN, JINGDE, LEE, SUNGJOO, LI, MING FU, SINGH, JAGAR, ZHU, CHUNXIANG, KWONG, DIM-LEE
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Patent
• Published: 2012
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/32776
• Institution: National University of Singapore

US7504328