Method for forming a shallow junction region using defect engineering and laser annealing
US7888224
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Main Authors: | , , , , |
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Other Authors: | |
Format: | Patent |
Published: |
2012
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/32789 |
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Institution: | National University of Singapore |
Summary: | US7888224 |
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