Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown

Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown

10.1023/A:1006745528344

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Bibliographic Details
Main Authors: Cha, C.L., Chor, E.F., Gong, H., Chan, L.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/50552
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Institution: National University of Singapore
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Summary:10.1023/A:1006745528344

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