Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown
10.1023/A:1006745528344
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Main Authors: | Cha, C.L., Chor, E.F., Gong, H., Chan, L. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/50552 |
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Institution: | National University of Singapore |
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