Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown
10.1023/A:1006745528344
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2014
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sg-nus-scholar.10635-505522023-08-21T09:14:03Z Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown Cha, C.L. Chor, E.F. Gong, H. Chan, L. ELECTRICAL ENGINEERING MATERIALS SCIENCE 10.1023/A:1006745528344 Journal of Materials Science Letters 19 9 817-821 JMSLD 2014-04-23T02:59:29Z 2014-04-23T02:59:29Z 2000 Article Cha, C.L., Chor, E.F., Gong, H., Chan, L. (2000). Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown. Journal of Materials Science Letters 19 (9) : 817-821. ScholarBank@NUS Repository. https://doi.org/10.1023/A:1006745528344 02618028 http://scholarbank.nus.edu.sg/handle/10635/50552 000086418000027 Scopus |
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National University of Singapore |
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Asia |
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Singapore Singapore |
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ScholarBank@NUS |
| description |
10.1023/A:1006745528344 |
| author2 |
ELECTRICAL ENGINEERING |
| author_facet |
ELECTRICAL ENGINEERING Cha, C.L. Chor, E.F. Gong, H. Chan, L. |
| format |
Article |
| author |
Cha, C.L. Chor, E.F. Gong, H. Chan, L. |
| spellingShingle |
Cha, C.L. Chor, E.F. Gong, H. Chan, L. Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown |
| author_sort |
Cha, C.L. |
| title |
Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown |
| title_short |
Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown |
| title_full |
Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown |
| title_fullStr |
Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown |
| title_full_unstemmed |
Effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown |
| title_sort |
effects of surface smoothness and deposition temperature of floating gates in flash memory devices to oxide/nitride/oxide interpoly dielectric breakdown |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/50552 |
| _version_ |
1775626517591621632 |