Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide

10.1109/16.918254

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Main Authors:	Guan, H., Cho, B.J., Li, M.F., Xu, Z., He, Y.D., Dong, Z.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/50559
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-505592023-08-28T21:23:30Z Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide Guan, H. Cho, B.J. Li, M.F. Xu, Z. He, Y.D. Dong, Z. ELECTRICAL & COMPUTER ENGINEERING ELECTRICAL ENGINEERING 10.1109/16.918254 IEEE Transactions on Electron Devices 48 5 1010-1013 IETDA 2014-04-23T02:59:39Z 2014-04-23T02:59:39Z 2001-05 Article Guan, H., Cho, B.J., Li, M.F., Xu, Z., He, Y.D., Dong, Z. (2001-05). Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide. IEEE Transactions on Electron Devices 48 (5) : 1010-1013. ScholarBank@NUS Repository. https://doi.org/10.1109/16.918254 00189383 http://scholarbank.nus.edu.sg/handle/10635/50559 000168361000029 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1109/16.918254
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Guan, H. Cho, B.J. Li, M.F. Xu, Z. He, Y.D. Dong, Z.
format	Article
author	Guan, H. Cho, B.J. Li, M.F. Xu, Z. He, Y.D. Dong, Z.
spellingShingle	Guan, H. Cho, B.J. Li, M.F. Xu, Z. He, Y.D. Dong, Z. Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide
author_sort	Guan, H.
title	Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide
title_short	Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide
title_full	Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide
title_fullStr	Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide
title_full_unstemmed	Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide
title_sort	experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/50559
_version_	1775626517929263104

Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide

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