Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide
10.1109/16.918254
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sg-nus-scholar.10635-505592024-11-14T01:25:00Z Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide Guan, H. Cho, B.J. Li, M.F. Xu, Z. He, Y.D. Dong, Z. ELECTRICAL ENGINEERING ELECTRICAL & COMPUTER ENGINEERING 10.1109/16.918254 IEEE Transactions on Electron Devices 48 5 1010-1013 IETDA 2014-04-23T02:59:39Z 2014-04-23T02:59:39Z 2001-05 Article Guan, H., Cho, B.J., Li, M.F., Xu, Z., He, Y.D., Dong, Z. (2001-05). Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide. IEEE Transactions on Electron Devices 48 (5) : 1010-1013. ScholarBank@NUS Repository. https://doi.org/10.1109/16.918254 00189383 http://scholarbank.nus.edu.sg/handle/10635/50559 000168361000029 Scopus |
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ELECTRICAL ENGINEERING |
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ELECTRICAL ENGINEERING Guan, H. Cho, B.J. Li, M.F. Xu, Z. He, Y.D. Dong, Z. |
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Guan, H. Cho, B.J. Li, M.F. Xu, Z. He, Y.D. Dong, Z. |
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Guan, H. Cho, B.J. Li, M.F. Xu, Z. He, Y.D. Dong, Z. Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide |
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Guan, H. |
title |
Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide |
title_short |
Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide |
title_full |
Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide |
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Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide |
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Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide |
title_sort |
experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/50559 |
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