Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide

10.1109/16.918254

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書目詳細資料
Main Authors: Guan, H., Cho, B.J., Li, M.F., Xu, Z., He, Y.D., Dong, Z.
其他作者: ELECTRICAL ENGINEERING
格式: Article
出版: 2014
在線閱讀:http://scholarbank.nus.edu.sg/handle/10635/50559
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