Experimental evidence of interface-controlled mechanism of quasi-breakdown in ultrathin gate oxide

10.1109/16.918254

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Bibliographic Details
Main Authors:	Guan, H., Cho, B.J., Li, M.F., Xu, Z., He, Y.D., Dong, Z.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/50559
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Institution:	National University of Singapore

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