Modeling of deep buried structures in high-power devices based on proton beam induced charge microscopy

Modeling of deep buried structures in high-power devices based on proton beam induced charge microscopy

10.1016/S0168-583X(03)01022-X

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Bibliographic Details
Main Authors: Zmeck, M., Balk, L., Osipowicz, T., Watt, F., Phang, J., Khambadkone, A., Niedernostheide, F.-J., Schulze, H.-J.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Conference or Workshop Item
Published: 2014
Subjects:
Electrical field strength
High-power devices
IBIC
Online Access:http://scholarbank.nus.edu.sg/handle/10635/51212
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Institution: National University of Singapore
Description
Summary:10.1016/S0168-583X(03)01022-X

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