Modeling of deep buried structures in high-power devices based on proton beam induced charge microscopy
10.1016/S0168-583X(03)01022-X
Saved in:
Main Authors: | Zmeck, M., Balk, L., Osipowicz, T., Watt, F., Phang, J., Khambadkone, A., Niedernostheide, F.-J., Schulze, H.-J. |
---|---|
Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Conference or Workshop Item |
Published: |
2014
|
Subjects: | |
Online Access: | http://scholarbank.nus.edu.sg/handle/10635/51212 |
Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
Institution: | National University of Singapore |
Similar Items
-
IBIC analysis of high-power devices
by: Osipowicz, T., et al.
Published: (2014) -
Imaging of charge collection properties of CVD diamond using high-resolution ion beam induced charge technique with protons and alpha particles
by: Jakšić, M., et al.
Published: (2014) -
A review of ion beam induced charge microscopy
by: Breese, M.B.H., et al.
Published: (2014) -
Analysis of high-power devices using proton beam induced charge microscopy
by: Zmeck, M., et al.
Published: (2014) -
Ion beam induced charge microscopy studies of power diodes
by: Zmeck, M., et al.
Published: (2014)