Accurate modeling of the effects of fringing area interface traps on scanning capacitance microscopy measurement

Accurate modeling of the effects of fringing area interface traps on scanning capacitance microscopy measurement

10.1109/TED.2005.864367

Saved in:
Bibliographic Details
Main Authors: Hong, Y.D., Yeow, Y.T., Chim, W.K., Yan, J., Wong, K.M.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Dopant profile extraction
Interface traps
Scanning capacitance microscopy (SCM)
Semiconductor device modeling
Simulation
Online Access:http://scholarbank.nus.edu.sg/handle/10635/54865
Tags: Add Tag
No Tags, Be the first to tag this record!
Institution: National University of Singapore
Description
Summary:10.1109/TED.2005.864367

Similar Items