Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materials

10.1063/1.2837189

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Bibliographic Details
Main Authors:	Fang, L.W.-W., Pan, J.-S., Zhao, R., Shi, L., Chong, T.-C., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/55186
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Institution:	National University of Singapore

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Summary:	10.1063/1.2837189

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