Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materials

10.1063/1.2837189

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Bibliographic Details
Main Authors:	Fang, L.W.-W., Pan, J.-S., Zhao, R., Shi, L., Chong, T.-C., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/55186
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Institution:	National University of Singapore

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spelling	sg-nus-scholar.10635-551862023-10-25T21:29:49Z Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materials Fang, L.W.-W. Pan, J.-S. Zhao, R. Shi, L. Chong, T.-C. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2837189 Applied Physics Letters 92 3 - APPLA 2014-06-17T02:40:11Z 2014-06-17T02:40:11Z 2008 Article Fang, L.W.-W., Pan, J.-S., Zhao, R., Shi, L., Chong, T.-C., Samudra, G., Yeo, Y.-C. (2008). Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materials. Applied Physics Letters 92 (3) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2837189 00036951 http://scholarbank.nus.edu.sg/handle/10635/55186 000252718600030 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.2837189
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Fang, L.W.-W. Pan, J.-S. Zhao, R. Shi, L. Chong, T.-C. Samudra, G. Yeo, Y.-C.
format	Article
author	Fang, L.W.-W. Pan, J.-S. Zhao, R. Shi, L. Chong, T.-C. Samudra, G. Yeo, Y.-C.
spellingShingle	Fang, L.W.-W. Pan, J.-S. Zhao, R. Shi, L. Chong, T.-C. Samudra, G. Yeo, Y.-C. Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materials
author_sort	Fang, L.W.-W.
title	Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materials
title_short	Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materials
title_full	Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materials
title_fullStr	Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materials
title_full_unstemmed	Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materials
title_sort	band alignment between amorphous ge2 sb2 te5 and prevalent complementary-metal-oxide-semiconductor materials
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/55186
_version_	1781412085750562816

Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materials

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