Band alignment between amorphous Ge2 Sb2 Te5 and prevalent complementary-metal-oxide-semiconductor materials
10.1063/1.2837189
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Main Authors: | Fang, L.W.-W., Pan, J.-S., Zhao, R., Shi, L., Chong, T.-C., Samudra, G., Yeo, Y.-C. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/55186 |
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Institution: | National University of Singapore |
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