Computational study of double-gate graphene nano-ribbon transistors

Computational study of double-gate graphene nano-ribbon transistors

10.1007/s10825-008-0243-1

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Bibliographic Details
Main Authors: Liang, G., Neophytou, N., Lundstrom, M.S., Nikonov, D.E.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Subjects:
Graphene nanoribbon
MOSFETs
NEGF
Quantum tunneling
Transistors
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55382
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Institution: National University of Singapore

Internet

http://scholarbank.nus.edu.sg/handle/10635/55382

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