Computational study of double-gate graphene nano-ribbon transistors

Computational study of double-gate graphene nano-ribbon transistors

10.1007/s10825-008-0243-1

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書目詳細資料
Main Authors:	Liang, G., Neophytou, N., Lundstrom, M.S., Nikonov, D.E.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
主題:	Graphene nanoribbon MOSFETs NEGF Quantum tunneling Transistors
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/55382
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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