Electric passivation of interface traps at drain junction space charge region in p-MOS transistors

Electric passivation of interface traps at drain junction space charge region in p-MOS transistors

10.1016/S0026-2714(01)00172-X

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Bibliographic Details
Main Authors: Chen, G., Li, M.F., Jin, Y.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/55812
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Institution: National University of Singapore
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Summary:10.1016/S0026-2714(01)00172-X

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