Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain

10.1116/1.3025909

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Bibliographic Details
Main Authors:	Gao, F., Lee, S.J., Kwong, D.L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/55890
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-55890
record_format	dspace
spelling	sg-nus-scholar.10635-558902023-10-25T23:30:00Z Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain Gao, F. Lee, S.J. Kwong, D.L. ELECTRICAL & COMPUTER ENGINEERING 10.1116/1.3025909 Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 27 1 214-217 JVTBD 2014-06-17T02:48:18Z 2014-06-17T02:48:18Z 2009 Article Gao, F., Lee, S.J., Kwong, D.L. (2009). Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures 27 (1) : 214-217. ScholarBank@NUS Repository. https://doi.org/10.1116/1.3025909 10711023 http://scholarbank.nus.edu.sg/handle/10635/55890 000265839000041 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1116/1.3025909
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Gao, F. Lee, S.J. Kwong, D.L.
format	Article
author	Gao, F. Lee, S.J. Kwong, D.L.
spellingShingle	Gao, F. Lee, S.J. Kwong, D.L. Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain
author_sort	Gao, F.
title	Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain
title_short	Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain
title_full	Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain
title_fullStr	Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain
title_full_unstemmed	Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain
title_sort	enhancement mode gaas metal-oxide-semiconductor field-effect-transistor integrated with thin aln surface passivation layer and silicon/phosphorus coimplanted source/drain
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/55890
_version_	1781781073118625792

Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain

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