Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain

Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain

10.1116/1.3025909

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書目詳細資料
Main Authors:	Gao, F., Lee, S.J., Kwong, D.L.
其他作者:	ELECTRICAL & COMPUTER ENGINEERING
格式:	Article
出版:	2014
在線閱讀:	http://scholarbank.nus.edu.sg/handle/10635/55890
標簽:	添加標簽沒有標簽, 成為第一個標記此記錄!
機構:	National University of Singapore

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