Enhancement mode GaAs metal-oxide-semiconductor field-effect-transistor integrated with thin AlN surface passivation layer and silicon/phosphorus coimplanted source/drain
10.1116/1.3025909
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| Main Authors: | , , |
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| 格式: | Article |
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2014
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| 在線閱讀: | http://scholarbank.nus.edu.sg/handle/10635/55890 |
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| 機構: | National University of Singapore |