Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate

10.1109/TED.2013.2258924

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Bibliographic Details
Main Authors:	Liu, B., Gong, X., Zhan, C., Han, G., Chin, H.-C., Ling, M.-L., Li, J., Liu, Y., Hu, J., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Subjects:	Fin doping FinFETs GeOI Germanium metal S/D MuGFETs oCD
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56136
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-56136
record_format	dspace
spelling	sg-nus-scholar.10635-561362023-10-25T21:33:00Z Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate Liu, B. Gong, X. Zhan, C. Han, G. Chin, H.-C. Ling, M.-L. Li, J. Liu, Y. Hu, J. Daval, N. Veytizou, C. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING Fin doping FinFETs GeOI Germanium metal S/D MuGFETs oCD 10.1109/TED.2013.2258924 IEEE Transactions on Electron Devices 60 6 1852-1860 IETDA 2014-06-17T02:51:09Z 2014-06-17T02:51:09Z 2013 Article Liu, B., Gong, X., Zhan, C., Han, G., Chin, H.-C., Ling, M.-L., Li, J., Liu, Y., Hu, J., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C. (2013). Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate. IEEE Transactions on Electron Devices 60 (6) : 1852-1860. ScholarBank@NUS Repository. https://doi.org/10.1109/TED.2013.2258924 00189383 http://scholarbank.nus.edu.sg/handle/10635/56136 000319355500008 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
topic	Fin doping FinFETs GeOI Germanium metal S/D MuGFETs oCD
spellingShingle	Fin doping FinFETs GeOI Germanium metal S/D MuGFETs oCD Liu, B. Gong, X. Zhan, C. Han, G. Chin, H.-C. Ling, M.-L. Li, J. Liu, Y. Hu, J. Daval, N. Veytizou, C. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C. Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate
description	10.1109/TED.2013.2258924
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liu, B. Gong, X. Zhan, C. Han, G. Chin, H.-C. Ling, M.-L. Li, J. Liu, Y. Hu, J. Daval, N. Veytizou, C. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C.
format	Article
author	Liu, B. Gong, X. Zhan, C. Han, G. Chin, H.-C. Ling, M.-L. Li, J. Liu, Y. Hu, J. Daval, N. Veytizou, C. Delprat, D. Nguyen, B.-Y. Yeo, Y.-C.
author_sort	Liu, B.
title	Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate
title_short	Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate
title_full	Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate
title_fullStr	Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate
title_full_unstemmed	Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate
title_sort	germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/56136
_version_	1781781116246556672

Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate

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