Germanium multiple-gate field-effect transistors formed on germanium-on-insulator substrate

• Main Authors: Liu, B., Gong, X., Zhan, C., Han, G., Chin, H.-C., Ling, M.-L., Li, J., Liu, Y., Hu, J., Daval, N., Veytizou, C., Delprat, D., Nguyen, B.-Y., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Subjects: Fin doping; FinFETs; GeOI; Germanium; metal S/D; MuGFETs; oCD
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/56136
• Institution: National University of Singapore

10.1109/TED.2013.2258924