High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealing

High quality silicon-germanium-on-insulator wafers fabricated using cyclical thermal oxidation and annealing

10.1063/1.2267663

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Bibliographic Details
Main Authors: Wang, G.H., Toh, E.-H., Foo, Y.-L., Tung, C.-H., Choy, S.-F., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56193
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Institution: National University of Singapore
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Summary:10.1063/1.2267663

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