Impact of nitrogen in HfON gate dielectric with metal gate on electrical characteristics, with particular attention to threshold voltage instability

Impact of nitrogen in HfON gate dielectric with metal gate on electrical characteristics, with particular attention to threshold voltage instability

10.1063/1.2709948

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Bibliographic Details
Main Authors: Yu, X., Zhu, C., Yu, M.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56267
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Institution: National University of Singapore
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Summary:10.1063/1.2709948

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