Impact of nitrogen in HfON gate dielectric with metal gate on electrical characteristics, with particular attention to threshold voltage instability

10.1063/1.2709948

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Bibliographic Details
Main Authors: Yu, X., Zhu, C., Yu, M.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56267
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Institution: National University of Singapore
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