Impact of nitrogen in HfON gate dielectric with metal gate on electrical characteristics, with particular attention to threshold voltage instability
10.1063/1.2709948
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Main Authors: | Yu, X., Zhu, C., Yu, M. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/56267 |
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Institution: | National University of Singapore |
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