Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing

Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing

10.1063/1.2812565

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Bibliographic Details
Main Authors: Liu, F., Tan, K.-M., Wang, X., Low, D.K.Y., Lai, D.M.Y., Lim, P.C., Samudra, G., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56306
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Institution: National University of Singapore

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http://scholarbank.nus.edu.sg/handle/10635/56306

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