Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing

10.1063/1.2812565

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Main Authors:	Liu, F., Tan, K.-M., Wang, X., Low, D.K.Y., Lai, D.M.Y., Lim, P.C., Samudra, G., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56306
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-56306
record_format	dspace
spelling	sg-nus-scholar.10635-563062023-10-25T23:12:56Z Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing Liu, F. Tan, K.-M. Wang, X. Low, D.K.Y. Lai, D.M.Y. Lim, P.C. Samudra, G. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.2812565 Journal of Applied Physics 102 9 - JAPIA 2014-06-17T02:53:05Z 2014-06-17T02:53:05Z 2007 Article Liu, F., Tan, K.-M., Wang, X., Low, D.K.Y., Lai, D.M.Y., Lim, P.C., Samudra, G., Yeo, Y.-C. (2007). Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing. Journal of Applied Physics 102 (9) : -. ScholarBank@NUS Repository. https://doi.org/10.1063/1.2812565 00218979 http://scholarbank.nus.edu.sg/handle/10635/56306 000250983700052 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1063/1.2812565
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Liu, F. Tan, K.-M. Wang, X. Low, D.K.Y. Lai, D.M.Y. Lim, P.C. Samudra, G. Yeo, Y.-C.
format	Article
author	Liu, F. Tan, K.-M. Wang, X. Low, D.K.Y. Lai, D.M.Y. Lim, P.C. Samudra, G. Yeo, Y.-C.
spellingShingle	Liu, F. Tan, K.-M. Wang, X. Low, D.K.Y. Lai, D.M.Y. Lim, P.C. Samudra, G. Yeo, Y.-C. Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing
author_sort	Liu, F.
title	Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing
title_short	Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing
title_full	Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing
title_fullStr	Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing
title_full_unstemmed	Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing
title_sort	incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/56306
_version_	1781781149996023808

Incorporation of tin in boron doped silicon for reduced deactivation of boron during post-laser-anneal rapid thermal processing

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