Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors

Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors

10.1063/1.1379786

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Bibliographic Details
Main Authors: Hou, Y.T., Li, M.F., Lai, W.H., Jin, Y.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56659
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Institution: National University of Singapore
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Summary:10.1063/1.1379786

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