Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors
10.1063/1.1379786
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Main Authors: | Hou, Y.T., Li, M.F., Lai, W.H., Jin, Y. |
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Other Authors: | ELECTRICAL ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/56659 |
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Institution: | National University of Singapore |
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