Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors

10.1063/1.1379786

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Main Authors: Hou, Y.T., Li, M.F., Lai, W.H., Jin, Y.
Other Authors: ELECTRICAL ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56659
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-566592023-10-25T23:27:14Z Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors Hou, Y.T. Li, M.F. Lai, W.H. Jin, Y. ELECTRICAL ENGINEERING ELECTRICAL & COMPUTER ENGINEERING 10.1063/1.1379786 Applied Physics Letters 78 25 4034-4036 APPLA 2014-06-17T02:57:07Z 2014-06-17T02:57:07Z 2001-06-18 Article Hou, Y.T., Li, M.F., Lai, W.H., Jin, Y. (2001-06-18). Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors. Applied Physics Letters 78 (25) : 4034-4036. ScholarBank@NUS Repository. https://doi.org/10.1063/1.1379786 00036951 http://scholarbank.nus.edu.sg/handle/10635/56659 000169339800037 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1063/1.1379786
author2 ELECTRICAL ENGINEERING
author_facet ELECTRICAL ENGINEERING
Hou, Y.T.
Li, M.F.
Lai, W.H.
Jin, Y.
format Article
author Hou, Y.T.
Li, M.F.
Lai, W.H.
Jin, Y.
spellingShingle Hou, Y.T.
Li, M.F.
Lai, W.H.
Jin, Y.
Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors
author_sort Hou, Y.T.
title Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors
title_short Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors
title_full Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors
title_fullStr Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors
title_full_unstemmed Modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors
title_sort modeling and characterization of direct tunneling hole current through ultrathin gate oxide in p-metal-oxide-semiconductor field-effect transistors
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/56659
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