MOS characteristics of substituted Al gate on high-κ dielectric

10.1109/LED.2004.837537

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Bibliographic Details
Main Authors:	Park, C.S., Cho, B.J., Kwong, D.-L.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/56695
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Institution:	National University of Singapore

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Summary:	10.1109/LED.2004.837537

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