MOS characteristics of substituted Al gate on high-κ dielectric

10.1109/LED.2004.837537

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Bibliographic Details
Main Authors: Park, C.S., Cho, B.J., Kwong, D.-L.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/56695
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Institution: National University of Singapore
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spelling sg-nus-scholar.10635-566952023-10-30T22:07:04Z MOS characteristics of substituted Al gate on high-κ dielectric Park, C.S. Cho, B.J. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1109/LED.2004.837537 IEEE Electron Device Letters 25 11 725-727 EDLED 2014-06-17T02:57:34Z 2014-06-17T02:57:34Z 2004-11 Article Park, C.S., Cho, B.J., Kwong, D.-L. (2004-11). MOS characteristics of substituted Al gate on high-κ dielectric. IEEE Electron Device Letters 25 (11) : 725-727. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.837537 07413106 http://scholarbank.nus.edu.sg/handle/10635/56695 000224712000005 Scopus
institution National University of Singapore
building NUS Library
continent Asia
country Singapore
Singapore
content_provider NUS Library
collection ScholarBank@NUS
description 10.1109/LED.2004.837537
author2 ELECTRICAL & COMPUTER ENGINEERING
author_facet ELECTRICAL & COMPUTER ENGINEERING
Park, C.S.
Cho, B.J.
Kwong, D.-L.
format Article
author Park, C.S.
Cho, B.J.
Kwong, D.-L.
spellingShingle Park, C.S.
Cho, B.J.
Kwong, D.-L.
MOS characteristics of substituted Al gate on high-κ dielectric
author_sort Park, C.S.
title MOS characteristics of substituted Al gate on high-κ dielectric
title_short MOS characteristics of substituted Al gate on high-κ dielectric
title_full MOS characteristics of substituted Al gate on high-κ dielectric
title_fullStr MOS characteristics of substituted Al gate on high-κ dielectric
title_full_unstemmed MOS characteristics of substituted Al gate on high-κ dielectric
title_sort mos characteristics of substituted al gate on high-κ dielectric
publishDate 2014
url http://scholarbank.nus.edu.sg/handle/10635/56695
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