MOS characteristics of substituted Al gate on high-κ dielectric
10.1109/LED.2004.837537
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sg-nus-scholar.10635-566952023-10-30T22:07:04Z MOS characteristics of substituted Al gate on high-κ dielectric Park, C.S. Cho, B.J. Kwong, D.-L. ELECTRICAL & COMPUTER ENGINEERING 10.1109/LED.2004.837537 IEEE Electron Device Letters 25 11 725-727 EDLED 2014-06-17T02:57:34Z 2014-06-17T02:57:34Z 2004-11 Article Park, C.S., Cho, B.J., Kwong, D.-L. (2004-11). MOS characteristics of substituted Al gate on high-κ dielectric. IEEE Electron Device Letters 25 (11) : 725-727. ScholarBank@NUS Repository. https://doi.org/10.1109/LED.2004.837537 07413106 http://scholarbank.nus.edu.sg/handle/10635/56695 000224712000005 Scopus |
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10.1109/LED.2004.837537 |
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ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Park, C.S. Cho, B.J. Kwong, D.-L. |
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Park, C.S. Cho, B.J. Kwong, D.-L. |
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Park, C.S. Cho, B.J. Kwong, D.-L. MOS characteristics of substituted Al gate on high-κ dielectric |
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Park, C.S. |
title |
MOS characteristics of substituted Al gate on high-κ dielectric |
title_short |
MOS characteristics of substituted Al gate on high-κ dielectric |
title_full |
MOS characteristics of substituted Al gate on high-κ dielectric |
title_fullStr |
MOS characteristics of substituted Al gate on high-κ dielectric |
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MOS characteristics of substituted Al gate on high-κ dielectric |
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mos characteristics of substituted al gate on high-κ dielectric |
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2014 |
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http://scholarbank.nus.edu.sg/handle/10635/56695 |
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