Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors
10.1149/1.2823567
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sg-nus-scholar.10635-568062023-09-21T20:12:09Z Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors Koh, A.T.-Y. Lee, R.T.-P. Lim, A.E.-J. Lai, D.M.-Y. Chi, D.-Z. Hoe, K.-M. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.2823567 Journal of the Electrochemical Society 155 3 H151-H155 JESOA 2014-06-17T02:58:49Z 2014-06-17T02:58:49Z 2008 Article Koh, A.T.-Y., Lee, R.T.-P., Lim, A.E.-J., Lai, D.M.-Y., Chi, D.-Z., Hoe, K.-M., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2008). Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors. Journal of the Electrochemical Society 155 (3) : H151-H155. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2823567 00134651 http://scholarbank.nus.edu.sg/handle/10635/56806 000253472900052 Scopus |
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NUS Library |
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Singapore Singapore |
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10.1149/1.2823567 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
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ELECTRICAL & COMPUTER ENGINEERING Koh, A.T.-Y. Lee, R.T.-P. Lim, A.E.-J. Lai, D.M.-Y. Chi, D.-Z. Hoe, K.-M. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. |
| format |
Article |
| author |
Koh, A.T.-Y. Lee, R.T.-P. Lim, A.E.-J. Lai, D.M.-Y. Chi, D.-Z. Hoe, K.-M. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. |
| spellingShingle |
Koh, A.T.-Y. Lee, R.T.-P. Lim, A.E.-J. Lai, D.M.-Y. Chi, D.-Z. Hoe, K.-M. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors |
| author_sort |
Koh, A.T.-Y. |
| title |
Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors |
| title_short |
Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors |
| title_full |
Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors |
| title_fullStr |
Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors |
| title_full_unstemmed |
Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors |
| title_sort |
nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/56806 |
| _version_ |
1779169374405394432 |