Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors
10.1149/1.2823567
Saved in:
| Main Authors: | , , , , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Published: |
2014
|
| Online Access: | http://scholarbank.nus.edu.sg/handle/10635/56806 |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Institution: | National University of Singapore |
| id |
sg-nus-scholar.10635-56806 |
|---|---|
| record_format |
dspace |
| spelling |
sg-nus-scholar.10635-568062024-11-11T07:46:20Z Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors Koh, A.T.-Y. Lee, R.T.-P. Lim, A.E.-J. Lai, D.M.-Y. Chi, D.-Z. Hoe, K.-M. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.2823567 Journal of the Electrochemical Society 155 3 H151-H155 JESOA 2014-06-17T02:58:49Z 2014-06-17T02:58:49Z 2008 Article Koh, A.T.-Y., Lee, R.T.-P., Lim, A.E.-J., Lai, D.M.-Y., Chi, D.-Z., Hoe, K.-M., Balasubramanian, N., Samudra, G.S., Yeo, Y.-C. (2008). Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors. Journal of the Electrochemical Society 155 (3) : H151-H155. ScholarBank@NUS Repository. https://doi.org/10.1149/1.2823567 00134651 http://scholarbank.nus.edu.sg/handle/10635/56806 000253472900052 Scopus |
| institution |
National University of Singapore |
| building |
NUS Library |
| continent |
Asia |
| country |
Singapore Singapore |
| content_provider |
NUS Library |
| collection |
ScholarBank@NUS |
| description |
10.1149/1.2823567 |
| author2 |
ELECTRICAL & COMPUTER ENGINEERING |
| author_facet |
ELECTRICAL & COMPUTER ENGINEERING Koh, A.T.-Y. Lee, R.T.-P. Lim, A.E.-J. Lai, D.M.-Y. Chi, D.-Z. Hoe, K.-M. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. |
| format |
Article |
| author |
Koh, A.T.-Y. Lee, R.T.-P. Lim, A.E.-J. Lai, D.M.-Y. Chi, D.-Z. Hoe, K.-M. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. |
| spellingShingle |
Koh, A.T.-Y. Lee, R.T.-P. Lim, A.E.-J. Lai, D.M.-Y. Chi, D.-Z. Hoe, K.-M. Balasubramanian, N. Samudra, G.S. Yeo, Y.-C. Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors |
| author_sort |
Koh, A.T.-Y. |
| title |
Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors |
| title_short |
Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors |
| title_full |
Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors |
| title_fullStr |
Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors |
| title_full_unstemmed |
Nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors |
| title_sort |
nickel-aluminum alloy silicides with high aluminum content for contact resistance reduction and integration in n-channel field-effect transistors |
| publishDate |
2014 |
| url |
http://scholarbank.nus.edu.sg/handle/10635/56806 |
| _version_ |
1821193841184604160 |