Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology

Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology

10.1149/1.3529354

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Bibliographic Details
Main Authors: Fang, L.W.-W., Zhao, R., Yeo, E.-G., Lim, K.-G., Yang, H., Shi, L., Chong, T.-C., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57047
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Institution: National University of Singapore
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Summary:10.1149/1.3529354

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