Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology

• Main Authors: Fang, L.W.-W., Zhao, R., Yeo, E.-G., Lim, K.-G., Yang, H., Shi, L., Chong, T.-C., Yeo, Y.-C.
• Other Authors: ELECTRICAL & COMPUTER ENGINEERING
• Format: Article
• Published: 2014
• Online Access: http://scholarbank.nus.edu.sg/handle/10635/57047
• Institution: National University of Singapore

10.1149/1.3529354