Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology

10.1149/1.3529354

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Bibliographic Details
Main Authors: Fang, L.W.-W., Zhao, R., Yeo, E.-G., Lim, K.-G., Yang, H., Shi, L., Chong, T.-C., Yeo, Y.-C.
Other Authors: ELECTRICAL & COMPUTER ENGINEERING
Format: Article
Published: 2014
Online Access:http://scholarbank.nus.edu.sg/handle/10635/57047
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Institution: National University of Singapore

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