Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology
10.1149/1.3529354
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Main Authors: | Fang, L.W.-W., Zhao, R., Yeo, E.-G., Lim, K.-G., Yang, H., Shi, L., Chong, T.-C., Yeo, Y.-C. |
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Other Authors: | ELECTRICAL & COMPUTER ENGINEERING |
Format: | Article |
Published: |
2014
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Online Access: | http://scholarbank.nus.edu.sg/handle/10635/57047 |
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Institution: | National University of Singapore |
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