Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology

10.1149/1.3529354

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Bibliographic Details
Main Authors:	Fang, L.W.-W., Zhao, R., Yeo, E.-G., Lim, K.-G., Yang, H., Shi, L., Chong, T.-C., Yeo, Y.-C.
Other Authors:	ELECTRICAL & COMPUTER ENGINEERING
Format:	Article
Published:	2014
Online Access:	http://scholarbank.nus.edu.sg/handle/10635/57047
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Institution:	National University of Singapore

id	sg-nus-scholar.10635-57047
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spelling	sg-nus-scholar.10635-570472023-10-31T07:22:26Z Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology Fang, L.W.-W. Zhao, R. Yeo, E.-G. Lim, K.-G. Yang, H. Shi, L. Chong, T.-C. Yeo, Y.-C. ELECTRICAL & COMPUTER ENGINEERING 10.1149/1.3529354 Journal of the Electrochemical Society 158 3 H232-H238 JESOA 2014-06-17T03:01:39Z 2014-06-17T03:01:39Z 2011 Article Fang, L.W.-W., Zhao, R., Yeo, E.-G., Lim, K.-G., Yang, H., Shi, L., Chong, T.-C., Yeo, Y.-C. (2011). Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology. Journal of the Electrochemical Society 158 (3) : H232-H238. ScholarBank@NUS Repository. https://doi.org/10.1149/1.3529354 00134651 http://scholarbank.nus.edu.sg/handle/10635/57047 000286677900071 Scopus
institution	National University of Singapore
building	NUS Library
continent	Asia
country	Singapore Singapore
content_provider	NUS Library
collection	ScholarBank@NUS
description	10.1149/1.3529354
author2	ELECTRICAL & COMPUTER ENGINEERING
author_facet	ELECTRICAL & COMPUTER ENGINEERING Fang, L.W.-W. Zhao, R. Yeo, E.-G. Lim, K.-G. Yang, H. Shi, L. Chong, T.-C. Yeo, Y.-C.
format	Article
author	Fang, L.W.-W. Zhao, R. Yeo, E.-G. Lim, K.-G. Yang, H. Shi, L. Chong, T.-C. Yeo, Y.-C.
spellingShingle	Fang, L.W.-W. Zhao, R. Yeo, E.-G. Lim, K.-G. Yang, H. Shi, L. Chong, T.-C. Yeo, Y.-C. Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology
author_sort	Fang, L.W.-W.
title	Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology
title_short	Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology
title_full	Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology
title_fullStr	Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology
title_full_unstemmed	Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology
title_sort	phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with cmos technology
publishDate	2014
url	http://scholarbank.nus.edu.sg/handle/10635/57047
_version_	1781781335972511744

Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology

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